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| FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) May 2005 FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) Features Dual band operation in a single package design Integrated bias bypass >30 dB modulated gain 2.4 to 2.5 GHz band >30 dB modulated gain 4.9 to 5.9 GHz band 27 dBm output power @ 1 dB compression for both frequency bands 3.5 % EVM at 20 dBm modulated power out (2.4 GHz) 3.5 % EVM at 20 dBm modulated power out (5.5 GHz) 3.3 V positive supply operation Separate integrated power detectors with 20 dB dynamic range 16 pin 4 x 4 x 1.4 mm leadless package Internally matched to 50 ohms and DC blocked RF input/output Optimized for use in 802.11a/b/g applications General Description The FMPA2151 is a dual frequency band power amplifier module designed for high performance WLAN applications in the 2.4-2.5 GHz and the 4.90-5.9 GHz frequency bands. The 16 pin 4 x 4 x 1.4 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. Only two external bias bypass capacitors are required. The two on-chip detectors provide power sensing capability. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Device (4 x 4 x 1.4mm) Z X 21 Y T T 51 Electrical Characteristics1 802.11g (2.4-2.5 GHz) OFDM Modulation (with 176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage (PA ON 2.4) Mirror Supply Current (PA ON 2.4) Gain Average Packet Current @ +20dBm Pout EVM @ +20dBm Pout2 Detector Output @ +20dBm Pout Detector Output @ +5dBm Pout POUT Spectral Mask Compliance 3 Min 2.4 3.0 2.6 Typ 3.3 3.0 0.1 31 170 3.5 850 230 +20 Max 2.5 3.6 3.6 Units GHz V V mA dB mA % mV mV dBm Notes: 1. VCC=3.3V, PA ON 2.4=3.3V, TA=25C, PA is constantly biased, 503/4 system. 2. Percentage includes system noise floor of EVM=0.8%. 3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMPA2151 Rev. B FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) Electrical Characteristics1 802.11a OFDM Modulation (with 176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage (PA ON 5.5) Mirror Supply Current (PA ON 5.5) Gain Average Packet Current @ +20dBm Pout EVM @ +18dBm Pout2 (4.9 to 5.35GHz) EVM @ +20dBm Pout 2 Min 4.9 3.0 2.6 Typ 3.3 3.0 0.1 32 295 3.5 3.5 820 195 +20 Max 5.9 3.6 3.6 Units GHz V V mA dB mA % % mV mV dBm (5.35 to 5.9GHz) Detector Output @ +20dBm Pout Detector Output @ +5dBm Pout POUT Spectral Mask Compliance3 Absolute Maximum Ratings4 Symbol VCC ICC PA ON Pin Tcase Tstg Parameter Positive Supply Voltage Supply Current Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature Ratings 6 500 4 0 -40 to +85 -55 to +150 Units V mA V dBm C C Notes: 1. VCC=3.3V, PA ON 5.5=3.3V, TA=25C, PA is constantly biased, 503/4 system. 2. Percentage includes system noise floor of EVM=0.8%. 3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 4. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. 2 FMPA2151 Rev. B www.fairchildsemi.com FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) Performance Data 802.11b/g OFDM Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth FFPA2151 EVM vs Modulated Output Power 802.11b/g Band 10 9 2.40GHz 2.45GHz Total Measured EVM (%) 8 7 6 5 4 3 2 1 0 4 5 6 2.50GHz 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Modulated Output Power (dBm) Note: Uncorrected EVM. Source EVM is approximately 0.8%. Single Tone 40 30 20 FFPA2151 S-Parameters 802.11b/g Band S-Parameter (dB) 10 0 -10 -20 -30 -40 -50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 S11 (dB) S21 (dB) S22 (dB) Frequency (GHz) 3 FMPA2151 Rev. B www.fairchildsemi.com FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) Performance Data 802.11a OFDM Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth FFPA2151 EVM vs Modulated Output Power 802.11a Band 10 9 8 4.90GHz 5.00GHz 5.10GHz 5.20GHz 5.30GHz 5.40GHz 5.50GHz 5.60GHz 5.70GHz 5.80GHz 5.90GHz Total Measured EVM (%) 7 6 5 4 3 2 1 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Modulated Output Power (dBm) Note: Uncorrected EVM. Source EVM is approximately 0.8%. Single Tone 40 30 20 FFPA2151 S-Parameters 802.11a Band S-Parameters (dB) 10 0 -10 -20 -30 -40 -50 -60 0 1 2 3 4 5 6 7 8 9 10 S11 (dB) S21 (dB) S22 (dB) Frequency (GHz) 4 FMPA2151 Rev. B www.fairchildsemi.com FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) Schematic PA ON 2.4 VCC1 2.4 VDET 2.4 1F Pin 1 2 3 Description GND RF IN 2.4 RF IN 5.5 GND PA ON 5.5 GND VCC2 5.5 VDET 5.5 GND RF OUT 5.5 RF OUT 2.4 GND VDET 2.4 VCC1 2.4 GND PA ON 2.4 CENTER GND 16 1 15 14 13 12 4 5 50 50 RF OUT 2.4 11 10 9 Z XYTT 2151 RF IN 2.4 RF IN 5.5 50 50 2 3 4 5 6 RF OUT 5.5 7 8 6 7 8 9 1F VDET 5.5 PA ON 5.5 VCC2 5.5 10 11 12 13 14 15 16 17 Package Outline TOP VIEW 12 11 10 9 13 14 15 16 Z XYTT 2151 1 2 3 4 8 7 6 5 Z X 21 Y T T 51 I/O 1 INDICATOR 1.40 Max. FRONT VIEW SEE DETAIL A 1 2 0.650 4.000.10 2.70 0.30 1.02 TYP. 0.30 TYP. 0.65 TYP. 0.10 TYP. 0.30 TYP. 0.650 2.70 4.000.10 BOTTOM VIEW DETAIL A TYP. 5 FMPA2151 Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 |
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